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Channel Mobility Model of Nano-Node MOSFETs Incorporating Drain-and-Gate Electric Fields

A novel channel mobility model with two-dimensional (2D) aspect is presented covering the effects of source/drain voltage (<i>V<sub>DS</sub></i>) and gate voltage (<i>V<sub>GS</sub></i>), and incorporating the drift and diffusion current on the surface channel at the nano-node level, at the 28-nm no...

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Wedi'i Gadw mewn:
Prif Awduron: Shou-Yen Chao, Heng-Sheng Huang, Ping-Ray Huang, Chun-Yeon Lin, Mu-Chun Wang
Fformat: Artigo
Iaith:Inglês
Cyhoeddwyd: MDPI AG 2022-02-01
Cyfres:Crystals
Pynciau:
channel mobility
drift current
diffusion current
nano-node process
device model
MOSFET
Mynediad Ar-lein:https://www.mdpi.com/2073-4352/12/2/295
Tagiau: Ychwanegu Tag
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