Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors

An enhancement-mode AlGaN/GaN metal-insulator-semiconductor high-electron- mobility-transistor was fabricated using a recess gate and CF₄ plasma treatment to investigate its reliable applicability to high-power devices and circuits. The fluorinated-gate device showed hysteresis during the...

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Bibliografiset tiedot

Päätekijät:	Soo Cheol Kang, Hyun-Wook Jung, Sung-Jae Chang, Seung Mo Kim, Sang Kyung Lee, Byoung Hun Lee, Haecheon Kim, Youn-Sub Noh, Sang-Heung Lee, Seong-Il Kim, Ho-Kyun Ahn, Jong-Won Lim
Aineistotyyppi:	Artigo
Kieli:	Inglês
Julkaistu:	MDPI AG 2020-10-01
Sarja:	Nanomaterials
Aiheet:	AlGaN/GaN HEMTs enhancement-mode fluorinated-gate recessed gate
Linkit:	https://www.mdpi.com/2079-4991/10/11/2116
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