Effects of Oxygen Precursor on Resistive Switching Properties of CMOS Compatible HfO<sub>2</sub>-Based RRAM
In this work, we investigate the resistive switching behaviors of HfO<sub>2</sub>-based resistive random-access memory (RRAM) in two different oxidants (H<sub>2</sub>O and O<sub>3</sub>) in an atomic layer deposition system. Firstly, the surface characteristics of the Ni/HfO<sub>2</sub>/Si stack are...
-д хадгалсан:
| Үндсэн зохиолчид: | , |
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| Формат: | Artigo |
| Хэл сонгох: | Inglês |
| Хэвлэсэн: |
MDPI AG
2021-08-01
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| Цуврал: | Metals |
| Нөхцлүүд: | |
| Онлайн хандалт: | https://www.mdpi.com/2075-4701/11/9/1350 |
| Шошгууд: |
Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!
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