Effect of Nickel Diffusion on Trap States and Interface Quality in Polycrystalline Silicon Structures
This work presents a comprehensive Deep-Level Transient Spectroscopy (DLTS) investigation into the influence of nickel (Ni) diffusion on the defect landscape and electronic properties of polycrystalline silicon (poly-Si) structures. The study aims to clarify how Ni incorporation modifies electricall...
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| Hauptverfasser: | , , , , , |
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| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
V.N. Karazin Kharkiv National University Publishing
2025-12-01
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| Schriftenreihe: | East European Journal of Physics |
| Schlagworte: | |
| Online-Zugang: | https://periodicals.karazin.ua/eejp/article/view/26725 |
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