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Effect of Nickel Diffusion on Trap States and Interface Quality in Polycrystalline Silicon Structures

This work presents a comprehensive Deep-Level Transient Spectroscopy (DLTS) investigation into the influence of nickel (Ni) diffusion on the defect landscape and electronic properties of polycrystalline silicon (poly-Si) structures. The study aims to clarify how Ni incorporation modifies electricall...

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Principais autores: Kanatbay A. Ismailov, Bayrambay K. Ismaylov, Nurulla F. Zikrillaev, Zoir T. Kenzhaev, Sherzod Z. Ollamberganov, Alloberdi K. Saparov
Formato: Artigo
Idioma:Inglês
Publicado em: V.N. Karazin Kharkiv National University Publishing 2025-12-01
coleção:East European Journal of Physics
Assuntos:
polycrystalline silicon
nickel clusters
dlts
deep-level defects
schottky diode
impurity diffusion
Acesso em linha:https://periodicals.karazin.ua/eejp/article/view/26725
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