Al‐Rich AlGaN Transistors with Regrown p‐AlGaN Gate Layers and Ohmic Contacts

Abstract Epitaxial regrowth processes are presented for achieving Al‐rich aluminum gallium nitride (AlGaN) high electron mobility transistor (HEMTs) with p‐type gates with large, positive threshold voltage for enhancement mode operation and low resistance Ohmic contacts. Utilizing a deep gate recess...

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Detalles Bibliográficos

Principais autores:	Brianna Klein, Andrew Allerman, Andrew Armstrong, Mary Rosprim, Colin Tyznik, Yinxuan Zhu, Chandan Joishi, Chris Chae, Siddharth Rajan
Formato:	Artigo
Idioma:	Inglês
Publicado:	Wiley-VCH 2025-01-01
Series:	Advanced Materials Interfaces
Assuntos:	semiconductors transistors ultra‐wide bandgaps
Acceso en liña:	https://doi.org/10.1002/admi.202301080
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