Al‐Rich AlGaN Transistors with Regrown p‐AlGaN Gate Layers and Ohmic Contacts

Abstract Epitaxial regrowth processes are presented for achieving Al‐rich aluminum gallium nitride (AlGaN) high electron mobility transistor (HEMTs) with p‐type gates with large, positive threshold voltage for enhancement mode operation and low resistance Ohmic contacts. Utilizing a deep gate recess...

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Autors principals:	Brianna Klein, Andrew Allerman, Andrew Armstrong, Mary Rosprim, Colin Tyznik, Yinxuan Zhu, Chandan Joishi, Chris Chae, Siddharth Rajan
Format:	Artigo
Idioma:	Inglês
Publicat:	Wiley-VCH 2025-01-01
Col·lecció:	Advanced Materials Interfaces
Matèries:	semiconductors transistors ultra‐wide bandgaps
Accés en línia:	https://doi.org/10.1002/admi.202301080
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