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Study the Effect of X-Ray on BJT Transistor at Different Periods of Time

In this research it has been studied the influence of X-Ray on the BJT (bipolar junction transistor ) NPN type NO 2N3035 for (5,10,15,20,25,30,35,40) min intervals . the (ICE ,VCE) and (IB-VBE ) characteristics have been studied for every irradiation time to in addition to study the change in (VB –...

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Detaylı Bibliyografya
Yazar: Walla M. Mohammad
Materyal Türü: Artigo
Dil:Inglês
Baskı/Yayın Bilgisi: University of Kirkuk 2010-12-01
Seri Bilgileri:Kirkuk Journal of Science
Konular:
Online Erişim:https://kujss.uokirkuk.edu.iq/article_41433_0004b441450bc176da82cf10e0f418a0.pdf
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