Study the Effect of X-Ray on BJT Transistor at Different Periods of Time
In this research it has been studied the influence of X-Ray on the BJT (bipolar junction transistor ) NPN type NO 2N3035 for (5,10,15,20,25,30,35,40) min intervals . the (ICE ,VCE) and (IB-VBE ) characteristics have been studied for every irradiation time to in addition to study the change in (VB –...
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| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
University of Kirkuk
2010-12-01
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| Schriftenreihe: | Kirkuk Journal of Science |
| Schlagworte: | |
| Online-Zugang: | https://kujss.uokirkuk.edu.iq/article_41433_0004b441450bc176da82cf10e0f418a0.pdf |
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