AC Characteristics of van der Waals Bipolar Junction Transistors Using an MoS<sub>2</sub>/WSe<sub>2</sub>/MoS<sub>2</sub> Heterostructure
Two-dimensional layered materials, characterized by their atomically thin thicknesses and surfaces that are free of dangling bonds, hold great promise for fabricating ultrathin, lightweight, and flexible bipolar junction transistors (BJTs). In this paper, a van der Waals (vdW) BJT was fabricated by...
Gorde:
| Egile Nagusiak: | , , |
|---|---|
| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
MDPI AG
2024-05-01
|
| Saila: | Nanomaterials |
| Gaiak: | |
| Sarrera elektronikoa: | https://www.mdpi.com/2079-4991/14/10/851 |
| Etiketak: |
Etiketarik gabe, Izan zaitez lehena erregistro honi etiketa jartzen!
|