STRUCTURE AND techological improvments of tmbs diodes
An improved structure and technological process of trench MOS barrier Schottky (TMBS) diodes are developed and studied by 2D-simulation. The experiments performed demonstrated simplification of the technology by elimination of one photolithography and improvement of the diode parameters.
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| Principais autores: | , , |
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| Formato: | Artigo |
| Idioma: | Russo |
| Publicado em: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2019-06-01
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| coleção: | Доклады Белорусского государственного университета информатики и радиоэлектроники |
| Assuntos: | |
| Acesso em linha: | https://doklady.bsuir.by/jour/article/view/199 |
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