Optoelectronic Properties of CdSe/Si Heterojunction
In this paper n-CdSe/p-Si heteroj unction photodetector was fabricated bythermal-evaporation technique of CdSe thin film grown onto single crystalline Sisubstrate . The energy gap of CdSe film was estimated from transmittance spectraand found to be (1.89 eV) . The temperature dependence of Seebeck c...
Na minha lista:
| Autor principal: | |
|---|---|
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Unviversity of Technology- Iraq
2012-07-01
|
| coleção: | Engineering and Technology Journal |
| Assuntos: | |
| Acesso em linha: | https://etj.uotechnology.edu.iq/article_57262_29d3cab8016c716ad192dbf2dfa51130.pdf |
| Tags: |
Sem tags, seja o primeiro a adicionar uma tag!
|