Optoelectronic Properties of CdSe/Si Heterojunction
In this paper n-CdSe/p-Si heteroj unction photodetector was fabricated bythermal-evaporation technique of CdSe thin film grown onto single crystalline Sisubstrate . The energy gap of CdSe film was estimated from transmittance spectraand found to be (1.89 eV) . The temperature dependence of Seebeck c...
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| Autor Principal: | |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
Unviversity of Technology- Iraq
2012-07-01
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| Series: | Engineering and Technology Journal |
| Assuntos: | |
| Acceso en liña: | https://etj.uotechnology.edu.iq/article_57262_29d3cab8016c716ad192dbf2dfa51130.pdf |
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