Extremely small trap concentrations in high-purity n-type GaN grown by quartz-free hydride vapor phase epitaxy
Trap characterization was performed for n-type GaN grown by the quartz-free hydride vapor phase epitaxy method with a newly developed reactor. Deep-level transient spectroscopy revealed several electron and hole traps within 1 eV of the conduction and valence band edges. All were present at low conc...
Gorde:
| Egile Nagusiak: | , , , , |
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| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
IOP Publishing
2026-01-01
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| Saila: | Applied Physics Express |
| Gaiak: | |
| Sarrera elektronikoa: | https://doi.org/10.35848/1882-0786/ae466c |
| Etiketak: |
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