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Photoconductive Properties of Polycrystalline Silicon Thin Film Annealed at High Pressure of Deuterium

In a polysilicon-based photodetector structure, a polysilicon film is important because it acts as both a light-absorption layer and a conductive path. The grain boundary inside polysilicon acts as an energy barrier to the movement of carriers, and research on its passivation has been attempted. In...

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Príomhchruthaitheoir: Jae-Sung Lee
Formáid: Artigo
Teanga:Inglês
Foilsithe / Cruthaithe: IEEE 2024-01-01
Sraith:IEEE Access
Ábhair:
Rochtain ar líne:https://ieeexplore.ieee.org/document/10714351/
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