On the Transconductance of Polysilicon Thin Film Transistors

In order to achieve both driver and display capability for a number of display devices, TFT has attracted attention, model calculations are therefore presented for the grain boundary barrier height, in a polysilicon TFT considering the charge neutrality between the intrinsic free carriers and the gr...

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Hlavní autoři:	Alka Panwar, B.P. Tyagi
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	Sumy State University 2011-01-01
Edice:	Журнал нано- та електронної фізики
Témata:	Polysilicon thin film transistor Grain boundary Grain boundary barrier height Grain boundary trap states Transconductance.
On-line přístup:	http://jnep.sumdu.edu.ua/download/numbers/2011/3/articles/jnep_2011_V3_N3_28-35.pdf
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