A Unified Degradation Model of a-InGaZnO TFTs Under Negative Gate Bias With or Without an Illumination
Degradation behaviors of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under negative bias stress (NBS) and negative bias illumination stress (NBIS) are investigated systematically. In some cases, a two-stage degradation behavior of a-IGZO TFTs is observed under both NBS...
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| Principais autores: | , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
IEEE
2019-01-01
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| coleção: | IEEE Journal of the Electron Devices Society |
| Assuntos: | |
| Acesso em linha: | https://ieeexplore.ieee.org/document/8863377/ |
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