Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film transistors with various active layer thicknesses

The photoleakage current and the negative bias and illumination stress (NBIS)-induced instability in amorphous InGaZnO thin-film transistors (a-IGZO TFTs) with various active layer thicknesses (TIGZO) were investigated. The photoleakage current was found to gradually increase in a-IGZO TFTs irrespec...

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Principais autores:	Dapeng Wang, Mamoru Furuta
Formato:	Artigo
Idioma:	Inglês
Publicado em:	Beilstein-Institut 2018-09-01
Colecção:	Beilstein Journal of Nanotechnology
Assuntos:	active layer thickness gate bias illumination stress InGaZnO photoleakage current thin-film transistors
Acesso em linha:	https://doi.org/10.3762/bjnano.9.239
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