Threshold Voltage Shift of Flexible P-Type Poly-Silicon Thin Film Transistors Under Illumination Stress
The reliability of flexible p-type low temperature poly-silicon thin film transistors (TFTs) under sole illumination stress was investigated. As the TFT was exposed to illumination, the transfer characteristic curves of the TFTs shifted positively, accompanied by an increase in the off-state current...
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| Principais autores: | , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
IEEE
2025-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Assuntos: | |
| Acceso en liña: | https://ieeexplore.ieee.org/document/11112689/ |
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