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Accurate Inference With Inaccurate RRAM Devices: A Joint Algorithm-Design Solution

Resistive random access memory (RRAM) is a promising technology for energy-efficient neuromorphic accelerators. However, when a pretrained deep neural network (DNN) model is programmed to an RRAM array for inference, the model suffers from accuracy degradation due to RRAM nonidealities, such as devi...

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Главные авторы: Gouranga Charan, Abinash Mohanty, Xiaocong Du, Gokul Krishnan, Rajiv V. Joshi, Yu Cao
Формат: Artigo
Язык:Inglês
Опубликовано: IEEE 2020-01-01
Серии:IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
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Online-ссылка:https://ieeexplore.ieee.org/document/9069242/
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