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Endurance and Retention Degradation of Intermediate Levels in Filamentary Analog RRAM

The understanding of the retention and endurance degradation behavior of different levels of filamentary analog RRAM is critical for the development of the neuromorphic computing. This paper investigates the conductance distribution of different levels during retention and endurance tests. The low c...

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Principais autores: Meiran Zhao, Bin Gao, Yue Xi, Feng Xu, Huaqiang Wu, He Qian
פורמט: Artigo
שפה:Inglês
יצא לאור: IEEE 2019-01-01
סדרה:IEEE Journal of the Electron Devices Society
נושאים:
Analog RRAM
reliability
retention
endurance
neuromorphic computing
גישה מקוונת:https://ieeexplore.ieee.org/document/8846220/
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