Ultraviolet Emission From Resonant Tunnelling Metal–Insulator– Semiconductor Light Emitting Tunnel Diodes

Strong room-temperature electroluminescence at 365&#x00A0;nm has been demonstrated from simple Au&#x002F;AlN&#x002F;<italic> n</italic>-GaN metal&#x2013;insulator&#x2013;semiconductor (MIS) light emitting diodes, which do not contain <italic>p </italic>-doped material. Current-voltage and electrolum...

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ग्रंथसूची विवरण

मुख्य लेखकों:	Chen-Sheng Lin, Kate Cavanagh, Hei-Chit L. Tsui, Andrei Mihai, Bin Zou, Duncan W.E. Allsopp, Michelle A. Moram
स्वरूप:	Artigo
भाषा:	Inglês
प्रकाशित:	IEEE 2017-01-01
श्रृंखला:	IEEE Photonics Journal
विषय:	Resonant tunnelling diodes ultraviolet light emitting diodes metal-insulator-semiconductor device AlN/GaN electroluminescence
ऑनलाइन पहुंच:	https://ieeexplore.ieee.org/document/7947132/
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