Ultraviolet Emission From Resonant Tunnelling Metal–Insulator– Semiconductor Light Emitting Tunnel Diodes
Strong room-temperature electroluminescence at 365 nm has been demonstrated from simple Au/AlN/<italic> n</italic>-GaN metal–insulator–semiconductor (MIS) light emitting diodes, which do not contain <italic>p </italic>-doped material. Current-voltage and electrolum...
Sábháilte in:
| Príomhchruthaitheoirí: | , , , , , , |
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| Formáid: | Artigo |
| Teanga: | Inglês |
| Foilsithe / Cruthaithe: |
IEEE
2017-01-01
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| Sraith: | IEEE Photonics Journal |
| Ábhair: | |
| Rochtain ar líne: | https://ieeexplore.ieee.org/document/7947132/ |
| Clibeanna: |
Níl clibeanna ann, Bí ar an gcéad duine le clib a chur leis an taifead seo!
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