High Al-content AlGaN channel high electron mobility transistors on silicon substrate
The rapidly increasing power demand, downsizing of power electronics and material specific limitation of silicon has led to development of AlGaN/GaN heterostructures. Commercial GaN power devices are best available for radio frequency (RF) and high voltage switching applications. Emerging AlxGa1-xN...
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| Principais autores: | , , , , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Elsevier
2023-03-01
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| coleção: | e-Prime: Advances in Electrical Engineering, Electronics and Energy |
| Assuntos: | |
| Acesso em linha: | http://www.sciencedirect.com/science/article/pii/S2772671123000098 |
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