High Al-content AlGaN channel high electron mobility transistors on silicon substrate
The rapidly increasing power demand, downsizing of power electronics and material specific limitation of silicon has led to development of AlGaN/GaN heterostructures. Commercial GaN power devices are best available for radio frequency (RF) and high voltage switching applications. Emerging AlxGa1-xN...
I tiakina i:
| Ngā kaituhi matua: | , , , , , , , , , , |
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| Hōputu: | Artigo |
| Reo: | Inglês |
| I whakaputaina: |
Elsevier
2023-03-01
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| Rangatū: | e-Prime: Advances in Electrical Engineering, Electronics and Energy |
| Ngā marau: | |
| Urunga tuihono: | http://www.sciencedirect.com/science/article/pii/S2772671123000098 |
| Ngā Tūtohu: |
Kāore He Tūtohu, Me noho koe te mea tuatahi ki te tūtohu i tēnei pūkete!
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