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The Planar Core–Shell Junctionless MOSFET

The core–shell junctionless MOSFET (CS-JL FET) meets the process requirements of FD-SOI technology. The transistor body comprises a heavily doped ultrathin layer (core linking the source and the drain), located underneath an undoped layer (shell). Drain current, transconductance, and capacitance cha...

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Autores principales: Cunhua Dou, Weijia Song, Yu Yan, Xuan Zhang, Zhiyu Tang, Xing Zhao, Fanyu Liu, Shujian Xue, Huabin Sun, Jing Wan, Binhong Li, Yun Wang, Tianchun Ye, Yong Xu, Sorin Cristoloveanu
Formato: Artigo
Lenguaje:Inglês
Publicado: MDPI AG 2025-03-01
Colección:Micromachines
Materias:
junctionless
core–shell
mobility
FD-SOI
miniaturization
planar MOSFET
Acceso en línea:https://www.mdpi.com/2072-666X/16/4/418
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