The Planar Core–Shell Junctionless MOSFET
The core–shell junctionless MOSFET (CS-JL FET) meets the process requirements of FD-SOI technology. The transistor body comprises a heavily doped ultrathin layer (core linking the source and the drain), located underneath an undoped layer (shell). Drain current, transconductance, and capacitance cha...
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| Autors principals: | , , , , , , , , , , , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI AG
2025-03-01
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| Col·lecció: | Micromachines |
| Matèries: | |
| Accés en línia: | https://www.mdpi.com/2072-666X/16/4/418 |
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