Analysis of Group III-V Material-Based Symmetric High-k Spacer on S/D Underlap Junctionless Nanotube FET Considering for Cutting Edge Technology
The usage of III-V group semiconductors has increased drastically in the last few years, owing to their superior characteristics that can be tailored by adjusting the composition and structure of the materials. In this paper, a junctionless GAA (gate all around) nanotube FET has been studied with a...
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| Hauptverfasser: | , , , , |
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| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
IEEE
2025-01-01
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| Schriftenreihe: | IEEE Access |
| Schlagworte: | |
| Online-Zugang: | https://ieeexplore.ieee.org/document/11153643/ |
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