Citações do registro

Citação APA (7ª ed.)
Gupta, N., Kumar, A., Jain, A., Gupta, R., & Goyal, A. K. (2025). Analysis of Group III-V Material-Based Symmetric High-k Spacer on S/D Underlap Junctionless Nanotube FET Considering for Cutting Edge Technology. IEEE.
Citação do estilo Chicago (17ª ed.)
Gupta, Neha, Ajay Kumar, Aditya Jain, Rajeev Gupta, e Amit Kumar Goyal. Analysis of Group III-V Material-Based Symmetric High-k Spacer on S/D Underlap Junctionless Nanotube FET Considering for Cutting Edge Technology. IEEE, 2025.
Citação MLA (9ª ed.)
Gupta, Neha, et al. Analysis of Group III-V Material-Based Symmetric High-k Spacer on S/D Underlap Junctionless Nanotube FET Considering for Cutting Edge Technology. IEEE, 2025.
Nota: a formatação da citação pode não corresponder 100% ao definido pela respectiva norma.