Dark exciton anti-funneling in atomically thin semiconductors
Strain engineering can manipulate the propagation of excitons in atomically thin transition metal dichalcogenides. Here, the authors observe an anti-funnelling behavior, i.e., the exciton photoluminescence moves away from high-strain regions, and attribute it to the dominating role of propagating da...
Guardat en:
| Autors principals: | , , , , , , , , , , |
|---|---|
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Nature Portfolio
2021-12-01
|
| Col·lecció: | Nature Communications |
| Accés en línia: | https://doi.org/10.1038/s41467-021-27425-y |
| Etiquetes: |
Sense etiquetes, Sigues el primer a etiquetar aquest registre!
|