Dark exciton anti-funneling in atomically thin semiconductors
Strain engineering can manipulate the propagation of excitons in atomically thin transition metal dichalcogenides. Here, the authors observe an anti-funnelling behavior, i.e., the exciton photoluminescence moves away from high-strain regions, and attribute it to the dominating role of propagating da...
Guardado en:
| Autores principales: | , , , , , , , , , , |
|---|---|
| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
Nature Portfolio
2021-12-01
|
| Colección: | Nature Communications |
| Acceso en línea: | https://doi.org/10.1038/s41467-021-27425-y |
| Etiquetas: |
Sin Etiquetas, Sea el primero en etiquetar este registro!
|