Dark exciton anti-funneling in atomically thin semiconductors
Strain engineering can manipulate the propagation of excitons in atomically thin transition metal dichalcogenides. Here, the authors observe an anti-funnelling behavior, i.e., the exciton photoluminescence moves away from high-strain regions, and attribute it to the dominating role of propagating da...
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| Asıl Yazarlar: | , , , , , , , , , , |
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| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
Nature Portfolio
2021-12-01
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| Seri Bilgileri: | Nature Communications |
| Online Erişim: | https://doi.org/10.1038/s41467-021-27425-y |
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