Binary-Synaptic Plasticity in Ambipolar Ni-Silicide Schottky Barrier Poly-Si Thin Film Transistors Using Chitosan Electric Double Layer
We propose an ambipolar chitosan synaptic transistor that effectively responds to binary neuroplasticity. We fabricated the synaptic transistors by applying a chitosan electric double layer (EDL) to the gate insulator of the excimer laser annealed polycrystalline silicon (poly-Si) thin-film transist...
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| Главные авторы: | , |
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| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
MDPI AG
2022-09-01
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| Серии: | Nanomaterials |
| Предметы: | |
| Online-ссылка: | https://www.mdpi.com/2079-4991/12/17/3063 |
| Метки: |
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