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Binary-Synaptic Plasticity in Ambipolar Ni-Silicide Schottky Barrier Poly-Si Thin Film Transistors Using Chitosan Electric Double Layer

We propose an ambipolar chitosan synaptic transistor that effectively responds to binary neuroplasticity. We fabricated the synaptic transistors by applying a chitosan electric double layer (EDL) to the gate insulator of the excimer laser annealed polycrystalline silicon (poly-Si) thin-film transist...

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Principais autores: Ki-Woong Park, Won-Ju Cho
Format: Artigo
Sprog:Inglês
Udgivet: MDPI AG 2022-09-01
Serier:Nanomaterials
Fag:
Ni-silicide
ambipolar channel
polycrystalline silicon
thin-film transistor
artificial synaptic transistor
chitosan electrolyte
Online adgang:https://www.mdpi.com/2079-4991/12/17/3063
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