Characterization of Defects in GaN: Optical and Magnetic Resonance Techniques
GaN and its alloys with InN and AlN are of technological importance for a variety of optical, electronic, and optoelectronic devices due to its high thermal conductivity, wide band gap, high breakdown voltage and high saturation velocity. GaN-based devices now provide superior performance for a vari...
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| Principais autores: | , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI AG
2022-09-01
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| coleção: | Crystals |
| Assuntos: | |
| Acesso em linha: | https://www.mdpi.com/2073-4352/12/9/1294 |
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