Thermochemical treatment of sputtered-AlN/2D MoS2 seed layers: a new elaboration process of highly c-axis AlN films

AlN-based acoustic filters are key devices in radio frequency communications. The AlN material crystal quality on silicon substrates limits the current performances of these devices. Atomic layer deposition -grown 2D-MoS _2 thin film can be used as a template on silicon to improve AlN crystal qualit...

Бүрэн тодорхойлолт

Номзүйн дэлгэрэнгүй

Үндсэн зохиолчид:	J Patouillard, R Gassilloud, F Mercier, A Dussaigne, B Hyot, M Bernard, S Cadot, N Gauthier, N Vaxelaire, N Bernier, F Martin, C Raynaud, F Gianesello, A Mantoux, E Blanquet
Формат:	Artigo
Хэл сонгох:	Inglês
Хэвлэсэн:	IOP Publishing 2025-01-01
Цуврал:	JPhys Materials
Нөхцлүүд:	sputtering MoS2 AlN c-axis NH3
Онлайн хандалт:	https://doi.org/10.1088/2515-7639/adc3cb
Шошгууд:	Шошго нэмэх Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!