A Study of the Structural and Surface Morphology and Photoluminescence of Ni-Doped AlN Thin Films Grown by Co-Sputtering

Aluminum nitride (AlN) is a semiconductor material possessing a hexagonal wurtzite crystal structure with a large band gap of 6.2 eV. AlN thin films have several potential applications and areas for study, particularly in optoelectronics. This research study focused on the preparation of Ni-doped Al...

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Hlavní autoři:	Mohsin Khan, Ghazi Aman Nowsherwan, Aqeel Ahmed Shah, Saira Riaz, Muhammad Riaz, Ali Dad Chandio, Abdul Karim Shah, Iftikhar Ahmed Channa, Syed Sajjad Hussain, Rashid Ali, Shahzad Naseem, Muhammad Ali Shar, Abdulaziz Alhazaa
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	MDPI AG 2022-11-01
Edice:	Nanomaterials
Témata:	nickel AlN co-sputtering doping
On-line přístup:	https://www.mdpi.com/2079-4991/12/21/3919
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