Thermochemical treatment of sputtered-AlN/2D MoS2 seed layers: a new elaboration process of highly c-axis AlN films

AlN-based acoustic filters are key devices in radio frequency communications. The AlN material crystal quality on silicon substrates limits the current performances of these devices. Atomic layer deposition -grown 2D-MoS _2 thin film can be used as a template on silicon to improve AlN crystal qualit...

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Autori principali:	J Patouillard, R Gassilloud, F Mercier, A Dussaigne, B Hyot, M Bernard, S Cadot, N Gauthier, N Vaxelaire, N Bernier, F Martin, C Raynaud, F Gianesello, A Mantoux, E Blanquet
Natura:	Artigo
Lingua:	Inglês
Pubblicazione:	IOP Publishing 2025-01-01
Serie:	JPhys Materials
Soggetti:	sputtering MoS2 AlN c-axis NH3
Accesso online:	https://doi.org/10.1088/2515-7639/adc3cb
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