Oxide thin-film transistors based on i-line stepper process for high PPI displays
Indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) with a 1 um channel length were successfully fabricated by i-line lithography with a stepper process, resulting in high throughput. The a-IGZO TFT with a channel length of 1 μm exhibits high mobility of 8.77 cm2/Vs with an on/off current...
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| Principais autores: | , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Taylor & Francis Group
2023-04-01
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| coleção: | Journal of Information Display |
| Assuntos: | |
| Acesso em linha: | https://www.tandfonline.com/doi/10.1080/15980316.2022.2139769 |
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