Oxide thin-film transistors based on i-line stepper process for high PPI displays

Indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) with a 1 um channel length were successfully fabricated by i-line lithography with a stepper process, resulting in high throughput. The a-IGZO TFT with a channel length of 1 μm exhibits high mobility of 8.77 cm2/Vs with an on/off current...

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Λεπτομέρειες βιβλιογραφικής εγγραφής

Κύριοι συγγραφείς:	Ji-Min Park, Seong Cheol Jang, Seoung Min Lee, Min-Ho Kang, Kwun-Bum Chung, Hyun-Suk Kim
Μορφή:	Artigo
Γλώσσα:	Inglês
Έκδοση:	Taylor & Francis Group 2023-04-01
Σειρά:	Journal of Information Display
Θέματα:	IGZO short-channel thin-film transistor i-line stepper
Διαθέσιμο Online:	https://www.tandfonline.com/doi/10.1080/15980316.2022.2139769
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