Growth of stable SiC2N2-Si2CN4 phases during nitrogen incorporated sputter deposition of silicon carbide

The incorporation of nitrogen during sputtering of silicon carbide (SiC) target facilitates formation of different technologically significant phases. The bonding nature in these phases serve as the means of enhancing the hardness and toughness of the overall film getting deposited as shown by nano...

Ausführliche Beschreibung

Bibliografische Detailangaben

1. Verfasser:	A.S. Bhattacharyya
Format:	Artigo
Sprache:	Inglês
Veröffentlicht:	Elsevier 2024-06-01
Schriftenreihe:	Chemical Physics Impact
Schlagworte:	Silicon carbide Nitrogen Sputtering Bonding Raman
Online-Zugang:	http://www.sciencedirect.com/science/article/pii/S2667022423002931
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