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Growth of stable SiC2N2-Si2CN4 phases during nitrogen incorporated sputter deposition of silicon carbide

The incorporation of nitrogen during sputtering of silicon carbide (SiC) target facilitates formation of different technologically significant phases. The bonding nature in these phases serve as the means of enhancing the hardness and toughness of the overall film getting deposited as shown by nano...

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Hovedforfatter: A.S. Bhattacharyya
Format: Artigo
Sprog:Inglês
Udgivet: Elsevier 2024-06-01
Serier:Chemical Physics Impact
Fag:
Silicon carbide
Nitrogen
Sputtering
Bonding
Raman
Online adgang:http://www.sciencedirect.com/science/article/pii/S2667022423002931
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