Study of Phase Transition in MOCVD Grown Ga<sub>2</sub>O<sub>3</sub> from κ to β Phase by Ex Situ and In Situ Annealing
We report the post-growth thermal annealing and the subsequent phase transition of Ga<sub>2</sub>O<sub>3</sub> grown on c-plane sapphire substrates by metal organic chemical vapor deposition (MOCVD). We demonstrated the post-growth thermal annealing at temperatures higher than 900 °C under N<sub>2</...
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| Principais autores: | , , , , , , |
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| Format: | Artigo |
| Sprog: | Inglês |
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MDPI AG
2021-01-01
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| Serier: | Photonics |
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| Online adgang: | https://www.mdpi.com/2304-6732/8/1/17 |
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