Study of Phase Transition in MOCVD Grown Ga₂O₃ from κ to β Phase by Ex Situ and In Situ Annealing

We report the post-growth thermal annealing and the subsequent phase transition of Ga₂O₃ grown on c-plane sapphire substrates by metal organic chemical vapor deposition (MOCVD). We demonstrated the post-growth thermal annealing at temperatures higher than 900 °C under N<sub>2</...

Full description

Bibliographic Details

Main Authors:	Junhee Lee, Honghyuk Kim, Lakshay Gautam, Kun He, Xiaobing Hu, Vinayak P. Dravid, Manijeh Razeghi
Format:	Artigo
Language:	Inglês
Published:	MDPI AG 2021-01-01
Series:	Photonics
Subjects:	MOCVD phase transition Ga<sub>2</sub>O<sub>3</sub> thin films thermal annealing
Online Access:	https://www.mdpi.com/2304-6732/8/1/17
Tags:	Add Tag No Tags, Be the first to tag this record!