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Study of Phase Transition in MOCVD Grown Ga<sub>2</sub>O<sub>3</sub> from κ to β Phase by Ex Situ and In Situ Annealing

We report the post-growth thermal annealing and the subsequent phase transition of Ga<sub>2</sub>O<sub>3</sub> grown on c-plane sapphire substrates by metal organic chemical vapor deposition (MOCVD). We demonstrated the post-growth thermal annealing at temperatures higher than 900 °C under N<sub>2</...

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Autori principali: Junhee Lee, Honghyuk Kim, Lakshay Gautam, Kun He, Xiaobing Hu, Vinayak P. Dravid, Manijeh Razeghi
Natura: Artigo
Lingua:Inglês
Pubblicazione: MDPI AG 2021-01-01
Serie:Photonics
Soggetti:
MOCVD
phase transition
Ga<sub>2</sub>O<sub>3</sub>
thin films
thermal annealing
Accesso online:https://www.mdpi.com/2304-6732/8/1/17
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