Primary damage of 10 keV Ga PKA in bulk GaN material under different temperatures

Molecular dynamics (MD) simulations were conducted to investigate the temperature effects on the primary damage in gallium nitride (GaN) material. Five temperatures ranging from 300 K to 900 K were studied for 10 keV Ga primary knock-on atom (PKA) with inject direction of [0001]. The results of MD s...

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Bibliografiska uppgifter
Huvudupphovsmän: Huan He, Chaohui He, Jiahui Zhang, Wenlong Liao, Hang Zang, Yonghong Li, Wenbo Liu
Materialtyp: Artigo
Språk:Inglês
Publicerad: Elsevier 2020-07-01
Serie:Nuclear Engineering and Technology
Ämnen:
Molecular dynamics
Gallium nitride
Primary damage
Defects
Temperature
Länkar:http://www.sciencedirect.com/science/article/pii/S1738573319306679
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