Atomic‐Scale Epitaxy for Tailoring Crystalline GeSbTe Alloys Into Bidimensional Phases
ABSTRACT In this study, we establish an accurate growth diagram—describing the phase, composition, and atomic stacking of Ge‐Sb‐Te alloys (GST)—that can be used as a prediction tool for thin film deposition. This framework for epitaxy at the atomic scale allows for designing tailored crystalline GST...
I tiakina i:
| Ngā kaituhi matua: | , , , , , , , |
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| Hōputu: | Artigo |
| Reo: | Inglês |
| I whakaputaina: |
Wiley-VCH
2026-01-01
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| Rangatū: | Advanced Materials Interfaces |
| Ngā marau: | |
| Urunga tuihono: | https://doi.org/10.1002/admi.202500937 |
| Ngā Tūtohu: |
Kāore He Tūtohu, Me noho koe te mea tuatahi ki te tūtohu i tēnei pūkete!
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