Preparation and Performance Exploration of MoS₂/WSe₂ Van Der Waals Heterojunction Tunneling Field-Effect Transistor

Due to their high carrier mobility, thermal conductivity, and exceptional foldability, transition metal dichalcogenides (TMDs) present promising prospects in the realm of flexible semiconductor devices. Concurrently, tunneling field-effect transistors (TFETs) have garnered significant attention owin...

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Autori principali:	Chen Chong, Hongxia Liu, Shulong Wang, Shupeng Chen, Cong Yan
Natura:	Artigo
Lingua:	Inglês
Pubblicazione:	MDPI AG 2025-09-01
Serie:	Micromachines
Soggetti:	TMDs (transition metal dichalcogenides) TFET (tunneling field-effect transistor) van der Waals heterojunction
Accesso online:	https://www.mdpi.com/2072-666X/16/10/1108
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