Preparation and Performance Exploration of MoS<sub>2</sub>/WSe<sub>2</sub> Van Der Waals Heterojunction Tunneling Field-Effect Transistor
Due to their high carrier mobility, thermal conductivity, and exceptional foldability, transition metal dichalcogenides (TMDs) present promising prospects in the realm of flexible semiconductor devices. Concurrently, tunneling field-effect transistors (TFETs) have garnered significant attention owin...
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| Hlavní autoři: | , , , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
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MDPI AG
2025-09-01
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| Edice: | Micromachines |
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| On-line přístup: | https://www.mdpi.com/2072-666X/16/10/1108 |
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