Low-Temperature Deuterium Annealing for HfO₂/SiO₂ Gate Dielectric in Silicon MOSFETs

In this study, low-temperature deuterium annealing (LTDA) at 300 °C is proposed to enhance both the performance and reliability of silicon-based high-k metal gate (HKMG) MOSFETs. A comparative study with hydrogen (H2) annealing under identical conditions is conducted to evaluate the speci...

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Autori principali: Tae-Hyun Kil, Ju-Won Yeon, Hyo-Jun Park, Moon-Kwon Lee, Eui-Cheol Yun, Min-Woo Kim, Sang-Min Kang, Jun-Young Park
Natura: Artigo
Lingua:Inglês
Pubblicazione: IEEE 2024-01-01
Serie:IEEE Journal of the Electron Devices Society
Soggetti:
Annealing
high-k dielectric
hot-carrier injection (HCI)
low-temperature deuterium annealing (LTDA)
MOSFETs
positive bias stress (PBS)
Accesso online:https://ieeexplore.ieee.org/document/10758816/
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